AEROFLEX ACT-S512K32N-017P7Q
AEROFLEX ACT-S512K32N-017P7Q

AEROFLEX ACT-S512K32N-017P7Q

  • 16Mbit (512K x 32) high-speed static random access memory (SRAM)
  • Radiation-hardened design for space and satellite applications
  • 17ns access time for high-performance data processing
  • Single 3.3V power supply operation
  • Military-grade hermetic ceramic package
  • Complies with MIL-STD-883 and MIL-PRF-38534 standards
  • Total ionizing dose (TID) rating up to 300krad(Si)
  • Enhanced single event upset (SEU) immunity with advanced error correction
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In demanding aerospace and defense applications, reliable high-speed memory is critical for mission success. The AEROFLEX ACT-S512K32N-017P7Q is a radiation-hardened SRAM designed to meet the rigorous requirements of satellite systems, radar platforms, and electronic warfare equipment. With its 16Mbit capacity and 17ns access time, this memory device provides the performance needed for real-time data processing in harsh environments.
Built to military standards, this SRAM features an enhanced radiation-hardened design that ensures reliable operation in the presence of ionizing radiation. Its hermetic ceramic package provides protection against environmental contaminants and temperature extremes, making it suitable for use in both low-earth orbit and deep space missions. The single 3.3V power supply simplifies system integration while reducing power consumption in space-constrained applications.

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